Japanese

Staff of SS Laboratory

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Professor Yukichi SHIGETA

In our laboratory, we are going to study the (111) surface of Si, which is in general use as a semiconductor material with STM and RHEED. We intend to investigate, (1) Phase transition of the Si(111) surface from 7x7 into a 1x1 structure and surface melting at high temperature, (2) Surface electronic structure change by Boron doping, (3) Structure change and surface roughening during homo-epitaxial growth of SiCand@(4) Self-ordering of Ge quantum dots on the Si(111) surface.

E-mail: shigeta@yokohama-cu.ac.jp

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DSci 3: Atsuteru MATSUI

Development of Dual Tip STM measuring the property of nano-scale structure

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 DSci 1: Izumi MOCHIDUKI

 STM Study of Au Suicide nano-islands on Si(111)

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MSci 1: Shigeaki NISHIGIMA

RHEED Study of hetero-epitacial growth on a Semiconductor Surface

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BSci 4:@Kunihiko AOYAGI

Manipulation of Au nanodot

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BSci 4:@Toshiaki OKUTSU

Study of Strucral phase transition by RHEED

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BSci 4:@Maki ODAGIRI

Application of Dual tip STM

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BSci 4:  Katsuaki YAMAGUCHI

STM Study of DNA molecule

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Persons received the degree of Doctor in Science from the university

March 2003

Dr. Yuki FUKAYA

Observation of Dynamic Structure Change on the surface by New Reflection-High Energy Electron Diffraction System

Phys. Rev. B65.  195415-195422 (2002).http://publish.aps.org/abstract/prb/v65/p195415

gPhase transition from asymmetric to symmetric dimer structure on Si(001) surface at high temperatureh, Phys.Rev.Lett. 91, 126103 (2003).

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December 2003

Dr. Ryota NEGISHI

Faculty of Science, Gest Researcher @

gInterrelations between the local electronic states and the atomic structures in the Si nanoscale island on Si(111)-(7x7) surfaceh, J. Appl. Phys. 93, 4824-4830 (2003).

 gLocal structure and electronic state of a nanoscale Si island on Si(111)-7x7 substrateh, Surf. Sci., 507-510, 582-587 (2002).  

J. Appl. Phys.  96, 5013-5016 (2004).

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March  2006

Dr. Masahiko SUZUKI

gStudy of strain and electronic structure of Ge nanoislands on Si(111)-7~7 surfaceh Phys. Rev. B72, 235325 (2005).

gGrowth of nanoscale Ge magic islands on Si(111)-7~7 substrateh,@Surf. Sci., 539, 113-119 (2003)

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