重田研究室 論文リスト


Stabilization of amorphous structure in silicon thin film by adding germanium
Nobuaki Makino, and Yukichi Shigeta
J. Appl. Phys. 117, 235302 (2015) 2015年6月

Aki Tosaka, Tatsuya Kitamura, Takuhiro Sugiyama, Koji Koyama, and Yukichi Shigeta 
Influence of step morphology on the structural phase transition of the α-Al2O3(0001) surface
Appl. Phys. Lett. 104, 221601 (2014).

Aki Tosaka, Izumi Mochizuki, Ryota Negishi, and Yukichi Shigeta
Strain induced intermixing of Ge atoms in Si epitaxial layer on Ge(111)
J. Appl. Phys. 113, 073511 (2013).

Y. Shigeta, I. Mochizuki and R. Negishi,
“Strain Induced Modification of Surface Metallic States on √3×√3-Ag Structure”,
Proceedings of the 9th Russia-Japan Seminar on Semiconductor Surfaces, FEB RAS, IACP (Vladivostok) p.183 (2010).

Mayu Odagiri, Izumi Mochizuki, Yukichi Shigeta, and Aki Tosaka
”Direct observation of Si(111) √7 x √7-Co structure and its local electronic structure”
Appl. Phys. Lett. 97, (2010) 151911

Izumi Mochizuki, Ryota Negishi and Yukichi Shigeta
“Modification of electronic states of √3×√3-Ag structure by strained Ge/Si(111) substrate”
J. Appl. Phys. 106 013709 (2009)

A. Matsui and Y. Shigeta
"Development of probe-to-probe approach method for an independently controlled dual-probe scanning tunneling microscope",
Review of Scientific Instruments 78 (2007)106107
The paper has been selected for the November 5, 2007 issue of Virtual Journal of Nanoscale Science & Technology and November 1 2007 issue of Virtual Journal of Biological Physics Research.y.

I. Mochizuki, R. Negishi and Y. Shigeta,"Growth of "metallic Au silicide islands on the Si(111)-(7X7) substrate"
J. Phys: Conference Series   61 (2007)1056-1060

R. Negishi , I. Mochizuki and Y. Shigeta
"Fabrication of uniform Au silicide islands on the Si(111)-7×7 substrate"
Surf. Sci. 600 (2006)1125-1128

Masahiko Suzuki, Ryota Negishi, and Yukichi Shigeta
"Study of strain and electronic structure of Ge nanoislands on Si(111)-7×7 surface"
Phys. Rev. B 72 (2005) 235325 .

R. Negishi, M. Suzuki, and Y. Shigeta
"Electronic structures of dangling-bond states on the Si nanoisland and the Si(111) 7 x 7 substrate"

J. Appl. Phys. 98 (2005) 63712
: The paper has been selected for the October 10, 2005,Volume 12, Issue 15 of Virtual Journal of Nanoscale Science & Technology, .

R. Negishi, M. Suzuki and Y. Shigeta
"Study of photoelectron spectroscopy from extremely uniform Si nano-islands on Si(111) 7×7 substrate"
J. Appl. Phys. 96, 5013-5016 (2004).

Y. Shigeta and Y. Fukaya
"Structural phase transition and thermal vibration of surface atoms studied by reflection high-energy electron diffraction",
Appl. Surf. Sci. 237, 21-28 (2004).

Y. Shigeta and Y. Fukaya
"Study of Structure changes on the Si Surfaces using Reflection High-Energy Electron Diffraction"
International Journal of Modern Physics B, Vol. 18,. 289-316 (2004).

Y. Fukaya and Y. Shigeta
"Phase transition from asymmetric to symmetric dimer structure on Si(001) surface at high temperature",
Phys. Rev. Lett. 91 (2003) 126103

Suzuki and Y. S higeta
"Growth of nanoscale Ge magic islands on S i (111)-7 X7substrate ",
Surf. Sci. 539, 113-119 (2003).

R. Negishi and Y. Shigeta
"Interrelations between the local electronic states and the atomic structures in the Si nanoscale island on Si(111)-(7 X7) surface",
J. Appl. Phys. 93, 4824-4830 (2003).

Y. Fukaya and Y. Shigeta
"Fast measurement of rocking curve of reflection high-energy electron diffraction by using quasi-1D convergent beam",
Surf. Sci. 530, 175-180 (2003).

重田諭吉
"高速ビームロッキング法による反射高速電子線回折強度の測定とその応用"、表面科学 第 24 巻、128-135 (2003)
http://www-surface.phys.s.u-tokyo.ac.jp/sssj/Vol24/24-03/3g128-135.pdf

Y. Fukaya and Y. Shigeta
"Precursor to surface melting of Si(111) at high temperature", Phys. Rev. B65. 195415-195422 (2002). http://publish.aps.org/abstract/prb/v65/p195415

R. Negishi and Y. Shigeta
"Local structure and electronic state of a nanoscale Si island on Si(111)-7X7 substrate",
Surf. Sci. , 507-510, 582-587 (2002).

R. Negishi and Y. Shigeta
"Nucleation of polycrystalline layer induced by formation of 30 ° partial dislocation during Si/Si(111) growth",
Surf. Sci. , 505 ,225-233 (2002).

Y. Shigeta and Y. Fukaya
"Study of dynamic surface structure change by using reflection high-energy electron diffraction with magnetic deflector"
Trends in Vacuum Science & Technology, Vol. 4, 37-53 (2001). ( PDF:697 kB)

R. Negishi and Y. Shigeta
"Surface roughening induced by a characteristic surface structure of a Si film grown on Si(111) "
Surf. Sci., 481, 67-77 (2001).

K. Masuda and Y. Shigeta
"Formation of uniform nanoscale Ge islands on Si(111)-7x7"
Appl. Surf. Sci., 175/176, 77-82 (2001).

Y. Fukaya and Y. Shigeta
" New phase and surface melting of Si(111) at high temperature above 7×7-1×1phase transition"
Phys. Rev. Lett. 85,5150-5153 (2000). ( PDF file :175kB) http://publish.aps.org/abstract/prl/v85/p5150

Y. Fukaya, Y. Shigeta, and K. Maki
"Dynamic change in the surface and layer structures during epitaxial growth of Si on a Si(111)-7×7 surface"
Phys. Rev. B61, 13000-13004 (2000). ( PDF file: 278 kB) http://publish.aps.org/abstract/prb/v61/p13000

Y. Fukaya, K. Nakamura, and Y. Shigeta
"Wide range temperature dependence of RHEED rocking curve from a Si(111)-7×7 surface"
J. Vac. Sci. Technol. A18, 968-971(2000). ( PDF file :162 kB)   JVST link

H. Osman, J. Schmidt, K. Svensson, R.E. Palmer, Y. Shigeta, and J.P. Wilcoxon
"STM studies of passivated Au nanocrystals immobilized on a passivated Au(111) surface: ordered arrays and single electron tunneling"
Chem. Phys. Lett. 330, 1-6 (2.

K. Nakamura, K. Masuda and Y. Shigeta
"Difference in the structures on highly B-doped Si(111) surfaces by heating treatments" 
Surf. Sci., 454-456, 21-25 (2000).

深谷有喜,三井 裕,重田諭吉
"磁場による視射角偏向機能を備えた反射型高速電子線回折(RHEED)装置の試作と動的構造変化への応用"
真空,Vol.43, 587-594 (2000).

Y. Shigeta
"Phenomenological view of nucleation and growth of Si on Si(111)-7X7 superlattice"
Surface Review and Letters" Vol. 7, 61-66 (2000).  web

Y. Shigeta, H. Fujino and K. Maki
"Formation of uniform nano-scale Si islands on Si(111)-7X7 substrate"
J. Appl. Phys. 86, 881-883 (1999). (abstract)

Y. Shigeta, Y. Fukaya, H. Mitsui, and K. Nakamura
"Observation of RHEED rocking curves during Si/Si(111) film growth"
Surf. Sci., 402-404, 313-317 (1998).

重田諭吉
"表面構造のエピタキシアル成長におよぼす影響   − Si(111)-7X7表面上のSiホモエピタキシャル成長を例に −"
表面科学、第19巻 831-838 (1998)。 ( PDF file: 7,269kB) http://www-surface.phys.s.u-tokyo.ac.jp/sssj/Vol19/19-12/19-12-10.pdf

Y. Shigeta
"Influence of Surface structure on epitaxial growth of Si on Si(111)-7X7 substrate"
Surface Review and Letters, 5, 865-872 (1998).  http://ejournals.wspc.com.sg/srl/05/0503_04/shigeta.html