[国際学会発表]

  1. Y. SHIGETA , J. NAKATA, A.TOSAKA and K.KOYAMA, ” Measurement of Strain in GaN(0001) Substrate by using Kikuchi line of RHEED” The13th European Vacuum Congress (EVC-13), Session: SC-127, (Avairo, Portugal) 2014年9月9日 
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  3. A.TOSAKA,T.ISHII,andY.SHIGETA,“Quasi-two-dimensionalElectronGasStateofStrainedSi(111) √3×√3-Ag System” 13th European Vacuum Congress (EVC-13), Session: SC-104, (Avairo, Portugal) 2014年9月10日
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  5. Y. Shigeta, T. Ishii, A. Tosaka, “Relationship between Strain and Effective Mass in the Metallic Surface State of the √3×√3-Ag Structure on Si(111) epitaxial layer” 19th International Vacuum Congress (IVC-19) Session:SS-15 (Paris, France) 2013/9/9-13 
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  7. Koji Koyama, Hideo Aida, Junya Nakata, Takuhiro Sugiyama, Aki Tosaka, Yukichi Shigeta, Hidetoshi Takeda, Natsuko Aota, Toshiro Doi, Tsutomu Yamazaki, “GaN Substrate for Post-Silicon Power Devices - Surface and Subsurface Damage Evaluation for GaN Substrate Prepared by Chemical Mechanical Polishing-“ The 6th International Symposium on Advanced Science and Technology of Silicon Materials、(JSPS Si Symposium), (Kona, Hawaii, USA) , 2012年11月19日-23日。
  8. Junya Nakata, Takuhiro Sugiyama, Kouji Koyama, Aki Tosaka, Yukichi Shigeta, "Structure of GaN (0001) surface prepared by CMP observed with RHEED" The 10th Russia-Japan Seminar on Semiconductor Surfaces, P-17 (Tokyo, Japan), 2012年9月26-28日
  9. Y. Shigeta, A.Tosaka, I. Mochizuki and R. Negishi, "Strain induced intermixing of Ge into Si epitaxial layer" The 29th European Conference on Surface Science (ECOSS-29), (Edinburgh, UK), 2012年9月5-6日.
  10. Y. Shigeta, I. Mochizuki and R. Negishi, ”Strain in the heteroepitaxal growth of Si and Ge system”, The 9th Russia-Japan Seminar on Semiconductor Surfaces,(Viadivostok, Russia), 2010年9月26-30日
  11. Yukichi Shigeta, Izumi Mochizuki, Ryota Negishi,: Strain Induced Modification of Metallic Band of √3 x √3-Ag structure, Symposium on Surface Nano Science 2010: SSNS 10th (Shizkuishi, Japan) (Invited talk) 2010年1月16日
  12. Yukichi Shigeta, Izumi Mochizuki, Ryota Negishi, "Strain Induced Modification of Metallic Band of √3×√3-Ag Structure", Symposium on Surface and Nano Science 2010 :SSNS 10, (Shizukuishi, Japan) ,2010年1月16日
  13. Aki Tosaka, Tatsuya Kitamura, Yukichi Shigeta, “ Observation of Surface reconstruction of the vicinal Al2O3(0001) surface using Reflection High Energy Electron Diffraction”, 10th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, (Granada, Spain) 2009年9月
  14. Y.Shigeta, M.Odagiri, and I.Mochizuki, Direct observation of Si(111) √7×√7-Co structure and its local electronic structure, 10th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, (Granada, Spain), 2009年9月
  15. Izumi Mochizuki, Ryota Negishi, and Yukichi Shigeta,Modification of Electronic State on √3×√3-Ag Surface Structure by Lattice Strain, 10th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, (Granada, Spain) 2009年9月
  16. Izumi Mochizuki, Ryota Negishi, and Yukichi Shigeta,Electronic States of Strained √3x√3-Ag Structure Formed on Ge/Si(111) Surfaces, International Conference on Nanoscience and Technology 2008: ICN+T 2008, (Denver, Colorado) 2008年7月23日
  17. Yukichi Shigeta, Izumi Mochizuki and Ryota Negishi, Growth of metallic Au silicide islands on the Si(111)-(7x7) substrate, International Conference on Nanoscience and Technology 2006: 2006ICN+T, (Basel, Switzerland) 2006年8月1日
  18. Y. Shigeta, R. Negishi and M. Suzuki :Electronic structures of dangling bond states on rounded Si nanoislands and the Si(111)7×7 substrate, The 23th European Conference on Surface Science: ECOSS-23, (Berlin, Germany) 2005年9月6日
  19. M. Suzuki ,R. Negishi and Y. Shigeta: Electronic structure of Ge nano-islands on the Si(111) surface , 16th International Vacuum Congress: IVC-16 and 12th International Conference on Solid Surfaces: ICSS-12 (Venetia, Italy) , 2004年6月29日
  20. R. Negishi, M.Suzuki and Y. Shigeta: Electronic structure of the extremely uniform Si nano-islands on Si(111) substrate , 16th International Vacuum Congress: IVC-16 and 12th International Conference on Solid Surfaces: ICSS-12 (Venetia, Italy) , 2004年6月29日
  21. Y. Shigeta, M. Itoh, A. Yoshigoe and Y. Teraoka: Study of Phase Transition from Asymmetric to Symmetric Dimer Structure on the Si(001) Surface at High Temperature by Photoelectron Spectroscopy , 16th International Vacuum Congress: IVC-16 and 12th International Conference on Solid Surfaces: ICSS-12 (Venetia, Italy) , 2004年6月29日
  22. Y. Shigeta: Structural phase transition and thermal vibration of surface atoms studied by reflection high-energy electron diffraction , The 7th : ACSIN-7 (Nara, Japan), 2003年11月17日. (Invited Talk).
  23. R. Negishi, M.Suzuki and Y. Shigeta: Photoelecron study for the self-assembled Si nano-islands on Si(111)-7x7 DAS substrate , The 7th International Symposium on Atomically Controlled Surfaces and Interfaces : ACSIN-7 (Nara, Japan), 2003年11月18日
  24. Y.Fukaya and Y.Shigeta: High-temperature phase transitions of Si(001) surface , The 7th International Conference on the Structure of Surfaces: ICSOS-7 (Newcastle, Australia), 2002年7月25日
  25. Y.Shigeta, R.Sugisaki and Y.Fukaya: “Study of surface segregation of B atoms from highly B-doped Si with RHEED”, The 11th International Conference on Solid Film and Surfaces: ICFSF-11, (Marseille, France), 2002年7月12日
  26. R. Negishi and Y. Shigeta: “Surface structure and local electronic state of a self-assembled Si nano-island”, The 11th International Conference on Solid Film and Surfaces: ICFSF-11, (Marseille, France), 2002年7月9日
  27. R.Negishi and Y.Shigeta: Local structure and electronic state of a nanoscale Si island on Si(111)-7×7 substrate , Yamada conference LVII, (Tsukuba, Japan) 2001年11月15日
  28. M.Suzuki,K.Masuda and Y.Shigeta:Growth of Nanoscale Ge Magic Islands on Si (111)-7x7 Substrate Yamada conference LVII, (Tsukuba, Japan) 2001年11月15日
  29. M.Suzuki, K.Masuda and Y.Shigeta : Formation of nanoscale Ge magic islands on Si (111)-7x7 substrate , The 20th European Conference on Surface Science: ECOSS-20, (Krakow, Poland) 2001年9月6日
  30. R.Negishi and Y.Shigeta:Local structure and electronic state of a nanoscale Si island on Si(111)-7 x7 substrate, The 20th European Conference on Surface Science: ECOSS-20, (Krakow, Poland) 2001年9月6日
  31. Y.Shigeta and Y.Fukaya: Fast measurement of rocking curve of reflection high-energy electron diffraction by using quasi-1D convergent beam , The 20th European Conference on Surface Science: ECOSS-20, (Krakow, Poland) 2001年9月4日
  32. Y.Fukaya and Y.Shigeta: Anisotropic thermal vibration of surface atoms of Si(111) at high temperature , The 20th European Conference on Surface Science: ECOSS-20, (Krakow, Poland) 2001年9月4日
  33. K.Masuda, M.Suzuki and Y.Shigeta : Formation of uniform nanoscale Ge islands on Si(111) 7x7 , International Symposium on Surface and Interface Properties of Different Symmetry Crossing-2000:ISSI PDSC-2000, (Nagoya), 2000 年10月17日 .
  34. R.Negishi and Y.Shigeta: Surface roughening with growth of Si/Si(111) induced by the 30 °partial dislocation, ISSI PDSC-2000, (Nagoya) 2000年10月18 日
  35. Y. Fukaya and Y. Shigeta: New phase and surface melting of Si(111) at high temperature above the 7x7-1x1 phase transition temperature , ISSI PDSC-2000, (Nagoya), 2000年10月18日
  36. K.Masuda and Y.Shigeta : Formation of uniform nanoscale Ge islands on Si(111)7x7 , International Conference on Solid films and Surface: ICSFS-10, (Princeton, USA) 2000年7月10日
  37. R.Negishi and Y.Shigeta: The Surface roughening induced by characteristic surface structure formed on growing Si/Si(111) film , International Conference on Solid films and Surface: ICSFS-10, (Princeton, USA) 2000 年7 月10 日 .
  38. Y. Fukaya and Y. Shigeta : Phase transitions and surface melting of Si(111) at high temperature above the 7 x7 - 1x1 phase transition, International Conference on Solid films and Surface: ICSFS-10, (Princeton, USA) 2000年7月11日
  39. K. Nakamura, K. Masuda and Y. Shigeta:Difference in the structures on highly B-doped Si(111) surfaces by heating treatments , The 18th European Conference on Surface Science: ECOSS-18, (Vienna,Austria) 1999年9月21日
  40. Y.Fukaya and Y.Shigeta: Structure relaxation in the annealing process of Si/Si(111) , The 18th European Conference on Surface Science: ECOSS-18, (Vienna, Austria) 1999年9月21日
  41. H.Osman,J. Schmidt, R.E. Palmer, Y. Shigeta, and J.P. Wilcoxon: Room temperature coulomb blockade observed in an ordered layer of ligand-stabilised Gold clusters , 14th International Vacuum Congress and 10th International Conference on Solid Surface: IVC-14/ICSS-10, (Birmingham) 1998 年10月2日
  42. H.Fujino, K.Maki and Y. Shigeta, Evidence for nucleation of DAS surface during homoepitaxial growth Si(111)-7x7 surface , 14th International Vacuum Congress and 10th International Conference on Solid Surface: IVC-14/ICSS-10, (Birmingham) 1998 年10月3日<