Topics Japanese

The surface of a semiconductor, which is the most important material in the electronics industry, is fascinating because the surface shows a reconstructed structure having characteristic periodicity different from that of a bulk lattice. And the surface shows interesting phenomena: Phase transition at high temperature; Surface structure change by dopant; Influence of the surface structure in the epitaxial growth, and so on. In my laboratory, we are going to study the (111) surface of Si, which is in general use as a semiconductor material with STM and RHEED. We intend to investigate, (1) Phase transition of the Si(111) surface from 7x7 into a 1x1 structure and surface melting at high temperature, (2) Surface electronic structure change by Boron doping, and (3) Structure change and surface roughening during homo-epitaxial growth of Si.

From the latest our investigations, we have found out that the surface structure has a great influence on layer growth. Since the periodicity of the reconstructed surface structure is in the nanometer scale, we can make a nanoscale structure by using the surface structure as a template. This method will be very useful to make the nano-parts constructing the IC and LSI in the 21st century. We will try to make Ge quantum dots on the Si(111) surface.



ySelected papersz

A. Matsui and Y. Shigeta, "Development of probe-to-probe approach method for an independently controlled dual-probe scanning tunneling microscope", Review of Scientific Instruments 78, 106107 (2007). The paper has been selected for the November 5, 2007 issue of Virtual Journal of Nanoscale Science & Technology and November 1 2007 issue of Virtual Journal of Biological Physics Research.

I. Mochizuki, R. Negishi and Y. Shigeta, "Growth of metallic Au silicide islands on the Si(111)-(7 L 7) substrate"J. Phys: Conference Series, 61 1056-1060  (2007).

R. Negishi, I. Mochizuki and Y. Shigeta, gFabrication of uniform Au silicide islands on the Si(111)-7~7 substrateh Surf. Sci. 600, 1125-1128 (2006).

Masahiko Suzuki, Ryota Negishi, and Yukichi Shigeta,@gStudy of strain and electronic structure of Ge nanoislands on Si(111)-7~7 surfaceh Phys. Rev. B72, 235325 (2005).

R. Negishi, M. Suzuki, and Y. Shigeta, "Electronic structures of dangling-bond states on the Si nanoisland and the Si(111) 7 x 7 substrate,"J. Appl. Phys.  98, 63712 (2005).@: The paper has been selected for the  October 10, 2005,Volume 12, Issue 15 of Virtual Journal of Nanoscale Science & Technology,

Y. Shigeta and Y. Fukaya, gStructural phase transition and thermal vibration of surface atoms studied by reflection high-energy electron diffractionh, Appl. Surf. Sci. 237, 21-28 (2004).

Y. Shigeta and Y. Fukaya, gStudy of Structure changes on the Si Surfaces using Reflection High-Energy Electron Diffractionh International Journal of Modern Physics B, Vol. 18,. 289-316 (2004).

Y. Fukaya and Y. Shigeta,@gPhase transition from asymmetric to symmetric dimer structure on Si(001) surface at high temperatureh, Phys.Rev.Lett. 91, 126103 (2003).

M. Suzuki and Y. Shigeta , gGrowth of nanoscale Ge magic islands on Si(111)-7~7 substrateh,@Surf. Sci., 539, 113-119 (2003).

R. Negishi and Y. Shigeta, gInterrelations between the local electronic states and the atomic structures in the Si nanoscale island on Si(111)-(7~7) surfaceh,J. Appl. Phys. 93, 4824-4830 (2003).

Y. Fukaya and Y. Shigeta, gFast measurement of rocking curve of reflection high-energy electron diffraction by using quasi-1D convergent beamh, Surf. Sci. 530, 175-180 (2003).

Y. Fukaya and Y. Shigeta, gPrecursor to surface melting of Si(111) at high temperatureh, Phys. Rev. B65., 195415-195422 (2002).

R. Negishi and Y. Shigeta: gLocal structure and electronic state of a nanoscale Si island on Si(111)-7~7 substrateh,  Surf. Sci., 507-510, 582-587 (2002).

R. Negishi and Y. Shigeta: gNucleation of polycrystalline layer induced by formation of 30 partial dislocation during Si/Si(111) growthh, Surf. Sci., 505 ,225-233 (2002).

Y. Shigeta and Y. Fukaya: gStudy of dynamic surface structure change by using reflection high-energy electron diffraction with magnetic deflectorh Trends in Vacuum Science & Technology, Vol. 4, 37-53 (2001). (PDF:697kB)

R. Negishi and Y. Shigeta: gSurface roughening induced by a characteristic surface structure of a Si film grown on Si(111)h Surf. Sci., 481, 67-77 (2001).

K. Masuda and Y. Shigeta: gFormation of uniform nanoscale Ge islands on Si(111)-7x7h Appl. Surf. Sci., 175/176, 77-82 (2001).

Y. Fukaya and Y. Shigeta: gNew phase and surface melting of Si(111) at high temperature above 7~7-1~1 phase transitionh Phys. Rev. Lett. 85, 5150-5153(2000).

Y. Fukaya, Y. Shigeta, and K. MakiF gDynamic change in the surface and layer structures during epitaxial growth of Si on a Si(111)-7~7 surfaceh Phys. Rev. B61, 13000-13004 (2000). (PDF file: 278 kB)

Y. Fukaya, K. Nakamura, and Y. ShigetaF hWide range temperature dependence of RHEED rocking curve from a Si(111)-7~7 surfaceh J. Vac. Sci. Technol. A18, 968-971(2000). (PDF file: 162 kB)   JVST link

H.Osman, J. Schmidt, K. Svensson, R.E. Palmer, Y. Shigeta, and J.P. WilcoxonF hSTM studies of passivated Au nanocrystals immobilized on a passivated Au(111) surface: ordered arrays and single electron tunnelingh@Chem. Phys. Lett. 330, 1-6 (2000).

K. Nakamura, K. Masuda and Y. ShigetaF hDifference in the structures on highly B-doped Si(111) surfaces by heating treatmentsh  Surf. Sci., 454-456, 21-25 (2000).  

Y. ShigetaF@hPhenomenological view of nucleation and growth of Si on Si(111)-7~7 superlatticeh @Surface Review and Lettersh Vol. 7, 61-66 (2000).

Y. Shigeta, H. Fujino and K. MakiF@hFormation of uniform nano-scale Si islands on Si(111)-7w7 substrateh  @J. Appl. Phys. 86, 881-883 (1999). (abstract)

Y. Shigeta, Y. Fukaya, H. Mitsui, and K. NakamuraF@hObservation of RHEED rocking curves during Si/Si(111) film growthh @Surf. Sci., 402-404, 313-317 (1998).

Y. ShigetaF@hInfluence of Surface structure on epitaxial growth of Si on Si(111)-7w7 substrateh Surface Review and Letters, 5, 865-872 (1998).

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